发明名称 WIRING STRUCTURE IN INTEGRATED CIRCUIT
摘要 PURPOSE:To comply with an allowable distance of a pattern by a method wherein the part where a wiring pattern in the direction of a sub-axis connects orthogonally with the direction of a main axis is formed in a slant pattern that points retreated from respective cross point by half the lattice pitches in the lateral and longitudinal directions, respectively, are connected. CONSTITUTION:A wiring lattice pitch in the longitudinal direction must be (b) or larger, and a wiring lattice pitch in the lateral direction must be (c) or 2b/51/2, whichever larger. In case a pattern passing along lattices 11 and 12 via cross points 43 and 44 is formed, points 45 and 47 displaced by 1/2 the lattice pitch are obtained between cross points 43 and 44 constituting a pattern in the direction of a sub-axis to make a wiring pattern 27. In a wiring pattern 28, one end of its sub-axis direction part is interrupted at cross point 48, but a pattern passing through intermediate points 50 and 51 is the result using a slant pattern.
申请公布号 JPS5772348(A) 申请公布日期 1982.05.06
申请号 JP19800149782 申请日期 1980.10.24
申请人 NIPPON DENKI KK 发明人 YOSHIZAWA HITOSHI
分类号 H01L21/3205;H01L21/82;H01L23/52;H01L23/528 主分类号 H01L21/3205
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