| 摘要 |
PURPOSE:Starting fine powder of silicon carbide, from which impurities are removed by treating with an acid, is dipped in a basic aqueous solution and separated into solid and liquid phases and the pH value, then the acid content are adjusted to produce the titled fine powder of high dispersibility. CONSTITUTION:A fine powder of silicon carbide of more than 5m<2>/g specific surface area, less than 1mu average particle size and 1.1-1.7 average aspect ratio is treated with an acid to elute impurities, then dipped in a basic aqueous solution of 0.01-1N and separated into solid phase and liquid one to produce a high-quality silicon carbide fine powder containing less than 0.3wt% acid of 4.5-8pH. Then, the resultant fine powder of silicon carbide is added to a nickel matrix so as to become 70-250g/l and the substrate is made the anode to effect the composite plating under conditions of 5.0-6.5pH, 50-70 deg.C bath temperature and 10-30A/dm<2> current density. |
