| 摘要 |
PURPOSE:To imrove the operating speed of a registor section by a method wherein each source and drain are composed deeply in a diode section and shallowly in a registor section when the photo diode section consisting of a plurality of MOSFETs and the shift registor section consisting of a plurality of short channel MOSFETs are provided. CONSTITUTION:Thick field oxide films 21 are formed at the circumference and the central section of a p type Si substrate 20 and a thin gate oxide film 23 is deposited on the substrate 20 surrounded by the film 21 and a polycrystalline Si layer 24 is piled up on the whole surface including the film 23. Next, patterning is applied to the layer 24 to provide a polycrystalline Si gate 25 and the film 23 at the exposed regin is renewed to a thin oxide film 26 and after implanting P ion to a diode sectionIsurrounded by the film 21 by using the polycrystalline Si 24 composing a gate 25 as a mask, the film 26 is removed and deep n<+> type source and drain regions 29 are formed by thermal treatment. And shallow n<+> type source and drain regions 27 are provided diffusing As to a registor section II. |
