| 摘要 |
LINEAR SEMICONDUCTOR RESISTOR A diffused semiconductor resistance structure having a resistance value that is practically independent of applied voltage. The novel structure of the invention, as it relates to the illustrative embodiment, includes an isolation layer diffused into an underlying substrate, a resistance layer diffused into the isolation layer, and a conductive element connecting the isolation layer to an electrical contact near the mid-point of the resistance layer. The junction between the resistance layer and the isolation layer is thereby zero-biased at its midpoint, is forward-biased on one side of the midpoint, and is reverse-biased on the other side of the midpoint. Consequently, the average thickness of a depletion region formed at the junction, and the average effective depth of the resistance layer, are maintained constant and practically independent of applied voltage, to provide a resistance value that is also practically constant. |
