发明名称 |
Reactive ion etching of III-V compounds including InP, GaAs-InP and GaAlAs |
摘要 |
The successful application of the reactive ion etching technique to the III-V compounds requires the use of the appropriate etch gas. We have found that a gas mixture comprised of either CCl2F2 alone or in combination with one or more of the gasses: argon (Ar), oxygen (O2) and nitrogen (N2) will cleanly and effectively etch GaAs and InP and their ternary and quaternary alloys as well as AlGaAs and the oxides of GaAs. The effective ranges of relative flow rates of Ar, CCl2F2 and oxygen are: Ar (0-83%), CCl2F2 (8-100%), O2 (0-50%), and N2 (0-60%).
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申请公布号 |
US4326911(A) |
申请公布日期 |
1982.04.27 |
申请号 |
US19800212976 |
申请日期 |
1980.12.04 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
HOWARD, RICHARD E.;HU, EVELYN L. |
分类号 |
H01L21/306;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/306 |
代理机构 |
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地址 |
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