| 摘要 |
A method for manufacturing a semiconductor device comprises forming a first region of one conductivity type in a substrate of an opposite conductivity type through a main surface of the substrate, depositing a first metal electrode layer on the first region and depositing an insulation film on the first electrode layer. The insulation film is etched over the first region with a plurality of relatively minute holes to expose the first metal electrode layer through the holes and the first metal electrode layer is etched with a plurality of holes to expose the first region through said holes, the holes in the first metal electrode layer being etched such that the holes of the first metal electrode layer are larger than that of the insulation film. A second region is formed in the first region through the holes of the first metal electrode layer and insulation film. The second region is of opposite conductivity to the first region. A second metal electrode layer is formed on the insulation film so as to electrically connected to each exposed section of the second region through the holes of the first metal electrode layer and insulation film. |
