| 摘要 |
PURPOSE:To obtain an electrostatically attracting device having a strong attracting force by employing a planar electrode and increasing the ratio of the area of the eletrode to the area of the device. CONSTITUTION:When a voltage of approx. 1,000-5,000V is applied between a pair of planar electrodes 4 and 5, a member 3 to be attracted can be attracted. The electrodes 4, 5 are made of aluminum or the like, and an insulator 2 has a thickness (d) of approx. 50-200mum of polyethylene or the like. The member 3 is a conductor and forms a capacity between the electrodes 4 and 5, and the capacity is connected in series. When a voltage is applied to the capacity, electrostatically attracting force is produced and is proportional to the dielectric constant of the insulator 2 and the area of the electrodes 4, 5 as well as to the square of the applied voltage but is inversely proportional to the thickness of the insulator 2. According to this configuration, both the conductive material, e.g., a semiconductor wafer and a conductive member covered with a thin insulating film can be attracted, and the device having strong attracting force can be obtained with a simple construction. |
