| 摘要 |
PURPOSE:To obtain a high speedy and high density memory unit of a semiconductor devide by a method wherein a current of buried channel being amplified according to stored charge is detected to be read out. CONSTITUTION:N<+> type layers 13a, 13b are provided in the surface of a P type layer 12 on an insulating layer 11, a gate electrode 15 is provided interposing a gate insulating film 14 between them, and a word line terminal A for writing is fixed thereto. The N<+> type layers 13a, 13b are separated, a bit line terminal B for reading and an earthing terminal C are fixed to the P type layer 12, and a terminal D for bit line for writing and for word line for reading is fixed to the layer 13a. When charge is supplied to the N<+> type layer 13b, breadth of a space charge layer 17 is changed to change conductivity of the channel 18. Accordingly when change of current is detected between the terminals B-C, existence of stored information in the layer 13b can be read out. Because it is detected as change of the current value, quantity of read-out signal can be formed on a large scale. |
