| 摘要 |
PURPOSE:To largely raise the efficiency of a photoelectric conversion power, by connecting a junction type photocurrent generating element supplying an effective current to an external circuit in parallel with a photovoltaic generating element generating photo-induced volage. CONSTITUTION:A P-N junction is formed by diffusing boron into a N-Si monocrystalline plate of 10<17>cm<-3>, and a conductive In2O3 film, an insulating SiO2 film and an undoped CdTe film are formed on the surface of a P layer by using an electron beam evaporating method. Only the CdTe film is, after being formed, kept at 200-300 deg.C in a vacuun for baking, and both ends of the surfaces of a Si substrate and the CdTe film are plated with Ni. A resistivity of the above described CdTe film is approximately 10<8>OMEGAcm, and is 10<12>OMEGA or more between the Ni electrodes at both ends. This composite solar battery has higher performance to be 3.4V in its open end voltage at room temperature, 16mA/cm<2> in closed-circuit current density and 38% in photoelectric convergence efficiency. |
