| 摘要 |
PURPOSE:To improve productivity, by using amorphous Si or poly Si for a flush type hetero-junction-structure semiconductor laser filling layer. CONSTITUTION:An N type GaAlAs layer 3, a GaAs active layer 4, a P type GaAlAs layer 5 and a P type GaAs layer 6 are laminated in turn on an N type GaAs substrate 2, and after stripe sections on the center of the layer 3-6 are removed by etching, a morphous Si or poly Si is allowed to make vapor growth, and electrodes 9 and 10 are formed by flattening the surface. It is possible, by doing so, to obtain sigle-style semiconductor laser with a good productivity. |
