| 摘要 |
<p>PURPOSE:To effectively utilize a chip having a pit by selectively forming an insulating film by utilizing an electrolytic etching and deposition on the pit of a semi- insulating GaN on a conductive GaN. CONSTITUTION:A conductive GaN2 and a semi-insulating GaN3 are epitaxially grown on a transparent substrate 1, e.g., a sapphire, etc., a metallic layer 8 is then covered on the overall surface, is electrolytically etched to etch and remove only the metallic layer on the part in which a pit exists, an insulating film 11, e.g., Al2O3 or the like is deposited on the overall surface, the layer 8 is tehn etched, the Al2O3 layer 11 on the electrode is also lifted off and removed, and an electrode metallic layer is evantually formed. In this manner, the pit can be protected by the insulating layer. Accordingly, it can prevent the shortcircuit and can use a chip in which the pit exists.</p> |
