| 摘要 |
PURPOSE:To obtain a CTD device which has a constant distance between a substrate and an electrode and facilitates a transfer by forming second layer insulating film, then selectively removing the second layer insulating film and the conductive layer under the film and covering the second layer electrode thereon. CONSTITUTION:A ZnS film 2 and an Al deposited film, ZnS film 4 are formed on the surface of a substrate 1 made of Hg1-XCdXTe. Then, the second insulating film 4 is selectively removed by a photoetching method to remove the exposed aluminum layer, and the first transfer electrodes 3a-3d are formed. Subsequently, the aluminum is again deposited from above, is patterned by a lift-off method, and the second transfer electrodes 5a'-5d' are formed. The electrodes 3a-3d and 5a'- 5d' are not contacted with each other, and the distance between the electrodes and the substrate can be equally formed. |
