| 摘要 |
A process for preparing a crystal from a semiconductor material of the group II-VI is described, which involves growing on the crystal, employing a temperature difference method, a group VI element other than Te from a solution which contains Te and a group VI element and in which crystal nuclei consisting of a group II-VI material are disposed. The crystal is grown at a relatively low temperature while maintaining a predefined vapour pressure for the group VI element. The process is particularly suitable for forming a pn-junction while employing two solutions, of which the one has p-type and the other has n-type additives. In order to fabricate the pn-junction, the crystal is successively brought into contact with each of the two solutions for a given period.
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