Semi-conductor memory device for digital and analog memory application using single MOSFET memory cells.

摘要

The invention comprises a method and apparatus for placing a charge on the gate electrode of a MOSFET fabricated in a selected semiconductor material to serve as a memory, either of digital significance or analog significance depending upon the magnitude of the charge stored. An access MOSFET provides a path for the charge to reach the memory MOSFET gate electrode in the write mode. The same path is utilized for eliminating the charge in the erase mode with the current flow in the opposite direction. An access potential may be applied to the gate of the access MOSFET to permit its channel to become conducting for the above two modes. Non destructable readout is available by applying a predetermined voltage to the source electrode of the memory MOSFET and measuring the current flow through the memory MOSFET at either the source or drain side of the channel for a determination of charge or no charge or towards magnitude. The invention herein described was made in the course of or under a contract or subcontract thereunder, (or grant) with the Department of the Army.