Process and gas mixture for etching silicon dioxide and silicon nitride

摘要

Process and gas mixture for etching silicon dioxide and/or silicon nitride in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the selectivity of the etch. The process is carried out at relatively high pressure and power levels and provides substantially faster removal of silicon dioxide and/or silicon nitride than has heretofore been possible in planar reactors.