| 摘要 |
PURPOSE:To increase the sensitivity of a sense amplifier, by setting a prescribed level of transmission gate voltage of an MISFET type RAM for the power source voltage and separating the sense amplifier from a digit line during the action of the sense amplifier. CONSTITUTION:The sensing action is started after the cell signals are transmitted to sense nodes N11 and N21, and a signal phiS11 is raised up to a high level of potential. Thus a node N51 becomes higher than the potential of power source VDD via a capacitor 51, and accordingly the gate of a transistor T14 is controlled. As a result, the potential of a node N41 is lowered at or less than the supply VDD to turn off transmission gates T4 and T5. Thus the nodes N11 and N21 are interrupted from a digit line DD. Accordingly the sense amplification is carried out with no noise caused from the digit line to increase the sensitivity of a sense amplifier. |
