| 摘要 |
PURPOSE:To effectively control the temp. of a substance to be etched and to accelerate the etching by electrostatically attracting the substance to a temp. controllable support to intensify the thermal contact. CONSTITUTION:Static electricity is applied to the cathode 12 of a plasma, sputter or reactive sputter etching apparatus 10 to attract a substance 14 to be etched. The cathode 12 is a support for the substance 14 and is provided with a jacket 15 for cooling or heating and an electrode plate having a pair of plane electrodes or an electrostatic attractor 16. The electrostatically attracted substance 14 is brought into thermal contact with the cathode 12 to perform accurate temp. control, and the substance 14 is etched. |
