| 摘要 |
PURPOSE:To contrive to enhance reliability of a semiconfuctor integrated circuit device by a method wherein a metal having a high melting point, etc., is used to form a gate electrode, and a thermal nitride film obtained by nitrifying directly a semiconductor substrate is used for a gate insulating film. CONSTITUTION:Field oxide films 102 are made to grow in inactive regions of a P type Si substrate 101 of 10OMEGAcm, and the thermal nitride film 103 of 300Angstrom thickness obtained by direct reaction between the substrate 101 and ammonium at 1,100 deg.C, for example, is made to grow in an active region. The gate electrode 104 is formed with MO, and an interlayer insulating oxide film 106 is formed between an Al wiring 107 and the Mo electrode 104. A source and drain 105 can be obtained selfalignmently by ion implantation making the gate electrode 104 as a mask. Accordingly stability against the biastemperature characteristic test is made as favorable. |
