| 摘要 |
PURPOSE:To completely remove the material deposited on the periphery of the lower surface of the work by constituting the stage so that the center of the lower surface of the work is supported, and a space is provided under the peripheral part of the work. CONSTITUTION:The stage 5 is of a disc shape, and a doughnut shaped groove 7 is concentrically provided in a work mount 6 on the upper surface thereof. The circumference of a circle is located in the middle between the inner circumferential fringe and the outer circumferential fringe of said groove, and diameter of said circle is coincided with that of a wafer 1 which is the work. Therefore, when the wafer 1 is mounted on the specified position of the stage 5, the outer periphery of the wafer 1 is located on the groove 7. When plasma treatment is applied, the plasma reaches not only the upper surface of the wafer but also the periphery of the lower surface of the wafer 1 through groove 7. Therefore, the resist which is attached to the periphery of the lower surface of the wafer 1 can be ashed and removed. |
