| 摘要 |
PURPOSE:To prevent occurrence of warping by providing a growth blocking layer on a substrate in a net shape and selectively growing a semiconductor crystal. CONSTITUTION:An SiO2 film 2 is grown on GaAs semiconductor substrate 1. Then a photoresist film 3 is deposited, and unnecessary SiO2 film is removed so that the film 2 is remained in a net shape. Then a GaAs crystal 3 is grown on said substrate 1. After the growth, the net shaped film 2 is removed. The required large area GaAsP crystal is obtained by selecting the width of the net shaped film 2 so that the side of the crystal blocks are not linked by the lateral growth of both sides of the crystal blocks. In this constitution, since the crystal is separated in the blocks, the strain due to the thermal expansion and the like is alleviated by the gaps between the blocks, and the degree of warping becomes small. |
