| 摘要 |
PURPOSE:To obtain a detector having preferable characteristics by forming a silicon on one end face of a pipe formed of sapphire by a silicon-on-sapphire- technique, mounting a silicon diaphragm thereon, and thereby performing one step of mounting causing the production of a strain for a silicon diaphragm through one step. CONSTITUTION:A silicon layer 9 is formed by a silicon on sapphire technique on one end face of a pipe 8 of a sapphire in advance, is penetrated through a ceramic plate 10 provided with an electrode metallized layer 11, a silicon layer 9 is projected to the side of the layer 11, and is soldered fixedly. Then, a silicon diaphragm 6' is mounted on a silicon layer 9, is connected to the layer 11 via a fine metallic wire 7', and a cover is coated thereon. In this manner, the physical and electrical characteristics wit the diaphragm 6' and the pipe 8 can be, since the layer 9 is interposed therebetween, almost equal, thereby obtaining the detector having preferable characteristics. |
