| 摘要 |
PURPOSE:To epitaxially from GaAs and/or A GaAs having less defect by setting a crystalline growing temperature to 750+ or -50 deg.C, maintaining the solution of Ga main ingredient in the state near the saturation at the respective temperatures before starting growth and during growth and growing with the solution and substrate in quasi-balanced state. CONSTITUTION:Ge-added GaAs has specific relationship among deep impurity level density, crystalline growth starting temperature T deg.C and 1/T of the reciprocal thereof, two types of deep impurity levels, when the T is 900-750 deg.C, are produced in the activation energy, and the density is exponentially increased with the T increases. The impurity levels of this two types are caused by the intrinsic defect due to the vacancy of As, and become strong one-light emission recombination center. It is similar in A GaAs. Another two types of impurity levels are produced, when the T is 750-650 deg.C, and the density is increased with the T decreases. Then, the single crystalline layer of GaAs and/or A GaAs, where X=0-0.3, is set to T= 750+ or -50 deg.C and is grown from the quasi-balanced state, and the epitaxial layer of high quality can be obtained. |
