| 摘要 |
PURPOSE:To form the shallow PN junction having no crystal defect for the subject semiconductor device by a method wherein a diffusion containing polycrystalline silicon layer, to be used as an emitter diffusion source, is formed and after an ion implantation of base impurities has been performed, an emitter and a base are formed simultaneously by performing a heat treatment. CONSTITUTION:An insulating film 2 is formed on an N type single crystal substrate 1 and an aperture is provided. Then, a polycrystalline silicon layer 3 containing arsenic is grown. Subsequently, boron 4 is implanted by performing an ion implantation. Then, after a patterning is performed in emitter shape on the polycrystalline silicon layer 3, a silicon oxide film 5 is formed using a CVD method. Then, after an aperture to be used for base electrode resistive contact has been provided, a BN diffusion is performed and the emitter region, the base region and the diffusion layer for resistive contact are formed simultaneously. |
