发明名称 |
Power MOSFET protection circuit - has potentiometer controlled diode preceding auxiliary transistor applying voltage proportional to residual source and drain voltage |
摘要 |
<p>The protecting circuit for a power MOSFET (1) uses an auxiliary transistor (2) preceded by a diode (6) which conducts when MOSFET operates. The auxiliary transistor applies a voltage which is proportional to the residual voltage between the source (S) and drain (D) connections of the MOSFET. The diode is connected to a potentiometer (5) so as to control this proportionality. The diode is connected on one side with the drain connected and on the other side by a resistance (7) to a switch (16) at the positive side of a voltage source (8). Thepolarityof the diode is selected so that it conducts when the MOSFET conducts. Also between the gate and source is a Zener diode (12). The auxiliary transistor is controlled by a parallel capacitor (10). The MOSFET control voltage is alternatively supplied by a converter secondary winding (13) in series with a rectifier (14) and smoothing capacitor (15).</p> |
申请公布号 |
DE3034927(A1) |
申请公布日期 |
1982.03.25 |
申请号 |
DE19803034927 |
申请日期 |
1980.09.16 |
申请人 |
SIEMENS AG |
发明人 |
HEBENSTREIT,ERNST,DIPL.-ING. |
分类号 |
H03K17/082;(IPC1-7):02H7/20 |
主分类号 |
H03K17/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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