发明名称 METHOD FOR FORMING CONTACTS ON SHALLOW SEMICONDUCTOR REGIONS
摘要 1. A method for forming metal contacts on semiconductor crystals, wherein a metal is deposited on a semiconductor material, characterized in that it comprises : a step of transforming said semiconductor material located in the contact region into an amorphous material, whereby this transformation covers a material volume which is equal to the volume required to saturate the metal during an annealing step following the deposition of said metal.
申请公布号 DE2962159(D1) 申请公布日期 1982.03.25
申请号 DE19792962159 申请日期 1979.12.04
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CROWDER, BILLY LEE
分类号 H01L21/28;H01L21/265;H01L21/285;(IPC1-7):H01L21/28;H01L21/26 主分类号 H01L21/28
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