发明名称 VAPOR PHASE GROWTH DEVICE
摘要 PURPOSE:To prevent the leakage of a reaction gas into the atmosphere due to the damage of a quartz reaction pipe, and to form a thin-film without fouling the base by mounting a means for maintaining a decompression condition by a core pipe in stainless outside the reaction pipe. CONSTITUTION:The core pipe in stainless is fitted in order to maintain the decompression condition, the quartz reaction pipe is arranged between the core pipe and wafers, the damage of the quartz reaction pipe due to decompression is pervented, and a means is mounted which decreases fouling due to the exfoliation of a reactant more than a device using a stainless pipe for the reaction pipe. For example, the decompression condition in a reaction system of a thin-film forming device which is heated by means of a heater 4 and decompressed by means of an exhaust pump 5 is maintained by the core pipe 6 in stainless, a front cover member 7 in stainless and a back member 8 while the quartz reaction pipe 3 is disposed around the wafers 1, and the safe thin-film with few fouling is formed.
申请公布号 JPS5750422(A) 申请公布日期 1982.03.24
申请号 JP19800126234 申请日期 1980.09.11
申请人 NIPPON DENKI KK 发明人 MATSUMOTO YASUHIKO;KOBAYASHI SHIYOUJI
分类号 C23C16/44;H01L21/205;H01L21/31 主分类号 C23C16/44
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