发明名称 |
Process for producing a layer containing silicon and photoelectric conversion device utilizing this process |
摘要 |
Process for producing layers of silicon or one of its alloys in pure or doped form and able to absorb optical radiation, the layers being of limited thickness, it comprising a first stage of depositing the layer by chemical decomposition of a gaseous mixture containing silane at a temperature close to the crystallization temperature and a second stage of treating in a hydrogen plasma at a lower temperature.
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申请公布号 |
US4321420(A) |
申请公布日期 |
1982.03.23 |
申请号 |
US19800173431 |
申请日期 |
1980.07.29 |
申请人 |
THOMSON-CSF |
发明人 |
KAPLAN, DANIEL;SOL, NICOLE;LANDOUAR, PIERRE |
分类号 |
H01L31/04;H01L31/20;(IPC1-7):H01L31/06;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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