| 摘要 |
PURPOSE:To diffuse impurity in a part of a semiconductor substrate and to enable clear identification of the diffused region from other regions by employing polycrystalline Si containing impurity as a diffusion source. CONSTITUTION:An SiO2 film 2 is covered on the surface of an Si substrate 1, a hole is opened at a region to be diffused with impurity, and a polycrystalline Si layer 8 containing impurity is accumulated on the overall surface including the hole. The impurity may employ impurity of the same conductive type as the substrate 1 when the density of the diffused region 41 is desirably increased higher than the substrate 1, and may employ impurity to reversely conductive type when the region of reversely conductive type is desirably obtained. Thereafter, it is heat treated to convert the layer 8 into an SiO2 film 21, the impurity is diffused from the film 22 invaded into the substrate 1 exposed in the hole simultaneously to form a region 41. Subsequently, all the SiO2 films are removed, the substrate 1 having uneven surface on the region 41 is obtained, stepwise part 9 corresponding to the region 41 is also produced on the single crystalline Si layer 7 grown in gas phase on the substrate, and the existing position of the region 41 can be clearly obtained. |
