| 摘要 |
PURPOSE:To simultaneously heat treat a plurality of specific parts of a semiconductor wafer by supporting the wafer at the position of a reproduced image by a laser beam emitted from a laser, an optical system and a hologram. CONSTITUTION:A laser light 13 is generated from a laser 11, a signal light 16 is formed through a mask 15 patterned at the specific parts via an optical system 12, and a hologram 18 including mask information is formed with a reference light 4 through a lens 17. When a laser beam is produced from a laser 21, a parallel reproduction illumination light 23 is formed via an optical system 22, is diffracted through a hologram 27, and a reproduced image is formed through a lens 28 on a wafer 25, the position and the shape of the image becomes the same as the mask used to form the hologram 18. When the beam intensity on the reproduced image is set at the energy adapted for the heat treatment of the wafer, the predetermined heat treatment effect can obtained, and wide range can be simultaneously heat treated without damage of the specific parts and other parts. |
