| 摘要 |
PURPOSE:To separate an insular region uniformly by a method wherein finishing grinding is treated in a batch manner up to its midway when grinding substrates, the thickness of wafers is measured every one substrate, the remaining amounts of each substrate ground are calculated from the results and the substrates are ground separately. CONSTITUTION:The surface of a supporter layer is ground and a reference plane is prepared in the substrate 11 to which the supporter layer 8 is formed. The substrate is upset, and a great part of an unnecessary Si single crystal wafer are removed through rough grinding. The surface is finishing-ground until the Si single crystal insular regions are separated through batch treatment. The thickness of the wafers is measured every one sheet through an infrared interference method, and the remaining amounts of grinding, at which the insular regions of the whole regions in the substrate are separated completely and from which the desired thickness of islands is obtained, are calculated. The surfaces are finishing-ground every one sheet in response to the amounts of grinding. Accordingly, the insular regions of the wafers can uniformly be separated excellently and the islands can be thickened with superior accuracy, and mass-producing capability is improved. |
