发明名称
摘要 <p>In a circuit arrangement wherein a memory matrix and an address decoder are constructed of read only memories (ROMs), a semiconductor read only memory is characterized in that at least the address decoder ROM in which the number of output lines to be selected is smaller than that of output lines not be selected is made of a longitudinal system in which a plurality of MISFETs are connected in series between respective output lines arranged in a column and a reference voltage terminal, the MISFETs forming a desired pattern in a row, and that current is permitted to flow through only a load MISFET connected with a selected one of the address select lines.</p>
申请公布号 JPS5713079(B2) 申请公布日期 1982.03.15
申请号 JP19750016280 申请日期 1975.02.10
申请人 发明人
分类号 G11C17/00;G11C17/12;H03K19/177 主分类号 G11C17/00
代理机构 代理人
主权项
地址