| 摘要 |
PURPOSE:To manufacture a semiconductor device having excellent electric characteristics by providing the steps of heat treating to alloy a semiconductor element and electrodes formed on the element, etching the surface of the element and then baking it in reducing atmosphere. CONSTITUTION:A window for leading out an electrode is opened at a dioxidized silicon film on the surface of a semiconductor element made of an N-P-N transistor, and leading electrode is formed. Then, it is heat treated at 500-550 deg.C in the reducing atmosphere for 10-20min to bake the electrode. Then, it is heat treated to alloy the electrode and the element. Thereafter, the surface of the semiconductor element containing the electrode is etched, is heat treated at 500-550 deg.C in the reducing atmosphere for 5-30min, it is then heat treated at 300 deg.C in the reducing atmosphere for approx. 12hr, thereby obtaining a semiconductor device in which sodium is redistributed as shown by a curve Ie. |
