发明名称 |
Electroluminescent element |
摘要 |
An electroluminescent element comprising an n-type GaAs substrate, a GaAsP grading layer and an n-type GaAsP constant layer both of which are grown on the substrate epitaxially in this order, and an InxGa1-xAsyP1-y layer formed on top of the constant layer where 0.002</=x</=0.08 and 0.2</=y</=0.4.
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申请公布号 |
US4319259(A) |
申请公布日期 |
1982.03.09 |
申请号 |
US19800142712 |
申请日期 |
1980.04.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OHSIMA, MASAAKI;AKASAKI, ISAMU |
分类号 |
H01L21/208;H01L33/30;H01S5/00;(IPC1-7):H01L27/14 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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