| 摘要 |
PURPOSE:To form a multilayer wire having no stepwise disconnection by forming a dielectric film having a softening point equal to or higher than the first layer metallic wire on the first metallic wire of high reflectivity and low melting point metal and softening the dielectric film with laser light to form the second layer metallic wire. CONSTITUTION:An aluminum gate MOSFET having an SiO2 film 3, a gate oxidized film 4 and the first layer wiring region 6 is formed on an Si substrate 1 having source and drain regions 3, 4. A dielectric film 7 of phosphorus glass, lead glass film, etc. is formed on the overall surface of the substrate, and is annealed by the laser light 8 to be softened. Subsequently, the wire of second layer is formed through a contacting hole 9 as a multilayer wire. In this manner, the multilayer wire can be formed with low melting point metallic layer without stepwise disconnection, an interlayer insulation with the dielectric film can be formed, thereby improving the reliability. |
