发明名称 Method for making a depletion controlled switch
摘要 A switch for selecting internal circuit options in MOS/LSI circuits without altering the circuit layout on a semiconductor chip by selectively implanting channels of field-effect transistors such that selected circuit-option lines are coupled to a designated line. Switches may be constructed with multiple inputs and a single output, or with multiple outputs and a single input, or with multiple inputs and multiple outputs. A bidirectional switch may also be constructed by controlling the gate potential of each transistor connecting one of the option lines to the designated line with a two-input switch for selecting either a high or a low gate potential.
申请公布号 US4317275(A) 申请公布日期 1982.03.02
申请号 US19800110949 申请日期 1980.01.10
申请人 MOSTEK CORPORATION 发明人 DOZIER, HAROLD W.
分类号 H01L21/8246;H01L23/52;H01L27/118;H03K17/693;(IPC1-7):H01L21/26 主分类号 H01L21/8246
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