| 摘要 |
PURPOSE:To obtain a power transistor with a built-in protective diode by a method wherein a region having high impurity density is provided within the area, whereon a depletion layer will be formed, on the obverse side of the collector region of a junction transistor. CONSTITUTION:The protective diode is consisted of the N<+> region 5 to be provided within the collector region 2 and a base region 3 and a device 8 is formed in one body. The region 5 is formed within the area whereon the collector depletion layer will be formed and the density ratio between the regions 5 and 2 is established in proportion to the distance between the regions 3 and 5 in such manner that the withstand voltage between the regions 3 and 5 will be made smaller than that of the regions 3 and 2. However, this distance should be within the scope with which the reverse withstand voltage between the collector and emitter will not be reduced. Through these procedures, a miniaturized and highly integrated device can be manufactured at a low cost and the reliability of which can also be increased. |
