| 摘要 |
A static induction type semiconductor device containing a normal type static induction transistor having the structure that a source region, gate regions and drain regions are arrayed in a main surface of a channel-constituting semiconductor region, and that a sub-drain region is formed in the opposite surface of the channel-constituting semiconductor region so as to extend from a position corresponding to the source region up to a position corresponding to the drain regions. The provision of this sub-drain region makes it possible to realize easy isolation of a normal vertical structure static induction transistor in a semiconductor wafer, the normal vertical structure contributing to increasing the transconductance, and to improving the speed of operation, without sacrificing a high packing density.
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