| 摘要 |
PURPOSE:To use a charge transfer element for a readout function part, by transferring and reading charge obtained by subtrating the amount of signal charge from the constant amount of bias charge by a CCD. CONSTITUTION:A P layer 6-1 as a channel stopper, the 2nd N layer 5, a P type semiconductor substrate 1 under a readout gate electrode 8, the 1st N layer 2, and a P layer 6-2 are provided; and a constant amount of bias charge is applied to the 1st N layer 2 of a CCD and this bias charge is applied to the 2nd N layer 5 and then returned to the 1st N layer 2 to make the charge corresponding to a signal stay in the 2nd N layer 5. As a result, the CCD transfers and reads the charge as much as the amount obtained by subtracting the amount of signal charge from the constant amount of bias charge, so that charge transfer elements are usable for the reading function part of a two-story sensor which uses a silicon film, for example, for a photoelectric conversion part. |
