| 摘要 |
PURPOSE:To enhance efficiency of process and to contrive mass production and reduction of cost when the III-V group compound semiconductor crystal is made to grow by molecular beam epitaxy by a method wherein the V group element is supplied as the hydride. CONSTITUTION:Ga and Sn are filled up in molecular beam cells 11, 12 in a vacuum bell jar 10, As is blasted off in the form of AsH3 against a GaAs substrate 4 from a supplying nozzle 13, and when it is decomposed before reaching the substrate and is adhered to grow as As moluecule, an N type GaAs crystal layer being doped with Sn can be formed. Accordingly efficieny of process can be improved and mass production can be attained. |
