| 摘要 |
PURPOSE:To arbitrarily design the source and drain regions and the channel length of a semiconductor device by forming an insulating film having a hole on a semiconductor substrate, and constructing to have the source and drain regions at a single crystalline semiconductor layer to cover the hole and its periphery. CONSTITUTION:After an oxidized film 12 having a hole is formed on a p type Si substrate 11, an Si semiconductor layer is formed by a vapor phase epitaxial growth method, and a single crystalline Si semiconductor layer 13S and a polycrystalline Si semiconductor layer 13P are respectively formed at the parts corresponding to the holes on the film 12. Then, a laser (or charge particle) beam is emitted to expand the layer 13S. Subsequently, isolation oxidized film 14, Si gate electrode 15, gate oxidized film 16, n<+> type source region 17S and n<+> type drain region 17D are respectively formed. |
