| 摘要 |
PURPOSE:To obtain an insulating film of a high minuteness as well as to prevent warp and crack for the subject semiconductor by a method wherein a laser beam or the like is irradiated on the insulating film provided on a semiconductor substrate using a plasma CVD method or a high frequency spattering method. CONSTITUTION:After an Si3N4 film has been formed on the semiconductor substrate 31 using the plasma CVD method or the high frequency spattering method, a part 32' of the Si3N4 film is made more minute than the part 32'', where no electron beam is irradiated, by irradiating an electron beam. As a result, a selective etching can be performed according to the extent of irradiation and also, hydrogen contained in the insulating film can be separated, thereby enabling to prevent the warp and crack, generating on the protecting film and the semiconductor, and the exforiation of the protecting film. |
