| 摘要 |
PURPOSE:To form a thin film of high impurity and high quality by a method wherein a cell filled up with a molecular beam forming material is arranged in a small chamber coupled to an epitaxialy growth chamber, the cell is heated by high-frequency induction heating, and the molecular beam is irradiated on a substrate. CONSTITUTION:The circumference of an open cell 12 consisted of cylindrical pyrolytic boron nitride (PBN) having an opening at the upper part and accomodating the molecular beam forming material 11 of Ga, etc., is covered with a cylindrical radiation shielding plate 13, and a high-frequency induction coil 14 of copper pipe being wound around spirally thereon is provided. The coil 14 is cooled by making water to flow in the pipe. This cell is inserted in a small chamber coupled to the eiptaxial growth chamber, and a high-frequency voltage is applied to generate the molecular beam 15. Accordingly the part other than the source material is kept at a low temperature to suppress generation of unnecessary gas of CO2, erc., and the thin film of high quality can be formed. |
