| 摘要 |
PURPOSE:To obtain an Au-Si alloy electrode surely without sintering by putting a layer containing Au on an Si chip with intervention of a layer of material satisfactorily adhered to Au and Si. CONSTITUTION:Ti 7 is applied to the back surface of an Si chip 1 for 50-200Angstrom in thickness by evaporation, and thereon is applied Au 8 by evaporation. A gold leaf 4 is applied by thermocompression bonding to a given portion of a package substrate 3 and heated on a heat block 5 at a temperature of about 400 deg.C, and then the chip 1 is put thereon. The Au leaf smelts through Au-Si eutectic reaction and spreads over the back surface of the chip. When the package substrate 3 is removed from the heat block 5, the chip 1 is firmly bonded onto the package substrate 3 by a eutectic layer 9. Said constituion will provide strong bonding even if sintering is omitted. |
