| 摘要 |
<p>PURPOSE:To prevent the contact of a flux with a PN junction by a method wherein surfaces except a surface, which is fast stuck to a mount, of an optical semiconductor element are coated previously with an aluminum oxide before the element is mounted to a stem, the element is immersed in an etching liquid after the element is set up to the stem, and the aluminum oxide is removed. CONSTITUTION:When the four face cleavage type semiconductor lasre 2 is mounted onto the stem 1, the lasre 2 is plated on the stem 1, downward directing the active layer side where the generation of heat is much, and the whole is housed in a vacuum evaporating device under a condition of upside-down. The inside of the device is evacuated up to 1X10<-6>mm.Hg first, O2 gas is introduced to reach the vapor pressure of 1X10<-3>mm.Hg, the temperature is elevated up to approximately 1,500 deg.C and Al is evaporated from an Al source mounted into the device, and Al2O3 films are formed on five exposed surfaces of the element 2. The stem 1 is taken out of the inside of the device, and the element 2 and the stem 1 are fast stuck by using In. Accordingly, the PN junction is not short-circuited on the side surfaces of the element 2 even when In used for the element 2 is formed at the fringe as a projecting section 3.</p> |
