| 摘要 |
PURPOSE:To enable to perform washing of a reactor for plasma CVD method leaving no remnant on the inside wall of the reactor by a method wherein mixed gas of O2 gas and CF4 gas having the prescribed mixing ratio is introduced in the reactor, and the reactor is washed performing glow discharge. CONSTITUTION:After the reactor 1 is exhausted sufficiently with an exhauster 2, mixed gas of O2 gas and CF4 gas is introduced in the reactor 1 from a washing gas supplier 3. At thie time, content of O2 in the mixed gas is set at 15-25voc%. Then high-frequency glow discharge is performed with a plasma generator consisted of a high-frequency electric power source 5, a matching box 6, electrodes 7. F and O dissociated and activated by this glow discharge react with silicon carbide deposited on the inside wall of the reactor. Accordingly washing is enabled leaving no remnant on the inside wall of the reactor, and silicon carbide having little pin hole and superior film quality can be formed having favorable reproducibility. |
