| 摘要 |
PURPOSE:To improve the yield of a semiconductor device by coating the surface of an aluminum wire with alumina, accumulating a PSG(phosphosilicate glass) thereon, thereby preventing the direct contact of aluminum, avoiding the abnormal growth of the PSG caused by hillocks and preventing the occurrence of pinhole of a photoresist. CONSTITUTION:The surface of an aluminum wire layer is covered with a chemically stable alumina film, and is then accumulated with a PSG by a CVD method. Then, the PSG does not contact directly with the primary aluminum layer. That is, the P reaction of the aluminum and PSG is suppressed, the PSG is normally grown, and the unevenness on the surface is reduced. Thus, the occurrence of pinhole in the step of coating a photoresist can be prevented, and the yield and the reliability of the device can be improved. |
