| 摘要 |
PURPOSE:To readily produce an output from the second gate of a semiconductor device of dual gate type by arranging the size of the second gate electrode pad larger than the size of the drain electrode pad. CONSTITUTION:The second gate electrode pad G2P is provided at the opposite side via the first gate electrode pad G1P, source electrode pad SP and an active region in a crossover structure across the leading electrode of the second gate electrode G2. The pad G2P is formed remarkably larger than the drain electrode pad DP. Accordingly, when large power is produced from the electrode G2, it is extremely advantageous. |
