| 摘要 |
<p>Passivation of aluminum-metallized silicon components by applying at least one silicon layer. For the purpose of the subsequent contacting, the components are annealed after the application of the silicon layer at a temperature from 480 DEG to 570 DEG C. if the silicon layer thickness exceeds 0.1 mu m and a temperature from 400 DEG to 500 DEG C. if the silicon layer is up to about 0.1 mu m thick, it being possible to omit the annealing operation if the silicon layer thickness is less than about 0.05 mu m.</p> |
