发明名称 |
CONTROL TECHNIQUES FOR ANNEALING SEMICONDUCTORS |
摘要 |
<p>AUST-425l5 14. CONTROL TECHNIQUES FOR ANNEALING SEMICONDUCTORS For improving the control over a process for annealing surface layers (14) of semiconductor bodies (10) by melting the surface layer by a beam of radiant energy (21), the reflectivity of the surface of the layer is monitored (20,22) to detect when the surface layer changes its state between molten and solid states, and the amount of radiant energy directed to the surface is controlled (24) in response to such change.</p> |
申请公布号 |
CA1118114(A) |
申请公布日期 |
1982.02.09 |
申请号 |
CA19790333912 |
申请日期 |
1979.08.16 |
申请人 |
WESTERN ELECTRIC COMPANY, INCORPORATED |
发明人 |
AUSTON, DAVID H.;GOLOVCHENKO, JENE A.;SLUSHER, RICHART E.;SURKO, CLIFFORD M.;VENKATESAN, THIRUMALAI N. C. |
分类号 |
H01L21/263;H01L21/20;H01L21/268;H01L21/324;(IPC1-7):H01L21/326 |
主分类号 |
H01L21/263 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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