| 摘要 |
PURPOSE:To obtain a structure effective to control the transverse made of laser oscillation, by forming a high loss surface, with the part to be oscillated left, by etching, and forming a resonance surface by cleaving. CONSTITUTION:An N-Ga1-xAlxAs layer 2, an N-Ga1-yAs layer 3, a P-Ga1-xAlxAs layer 4, a P-GaAs layer 5 are epitaxially grown in order on a GaAs substrate 1. Then, an insulating film 6 of Al2O3, SiO2 or the like is formed on the P-GaAs layer 5 to obtain a P-side electrode 7 and an N-side electrode 8 respectively. In this case, a stripe 9 is for injecting electricity. Accodingly, such an easy manufacturing method wherein the resonance face is formed by cleaving and the high loss face in formed by etching can make the reflectance of the resonance face samller and obtain a stable transverse mode oscillation. |
